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SIHG24N65EF-GE3 Datasheet, PDF

  • Manufacturer model: SIHG24N65EF-GE3
  • Function description: Power Field-Effect Transistor, 24A I(D), 650V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
  • Manufacturer: Vishay Intertechnologies
  • Data sheet: -
  • Category: Power Field-Effect Transistors

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SIHG24N65EF-GE3 Chip related model

SIHG24N65EF-GE3 Related Specifications

ADT7461ARZ-REEL7 5962-8865002RA M83513/02-DN M83513/01-DN M83513/01-BN M83513/01-AN MIC2562A-0BTS LM98515CCMTX/NOPB LMX2434TM/NOPB LP3918TLX-A/NOPB MIC2551AYTS LMX2512LQ0967/NOPB LMX2531LQE1146E/NOPB MIC2595-2YM MIC2595R-2YM LM4802BLQ/NOPB MIC2940A-3.3BU TR LM4838MTX/NOPB HA1630S07CMEL-E LM3502ITL-44/NOPB MIC4742YTSE LP3919RL-B/NOPB UPA2352T1P-E4-A SCAN25100TYA/NOPB LM48555TLX/NOPB MIC2937A-12BU TR LP2953IN/NOPB MIC4043BM4 TR SCAN921023SLC/NOPB LP3963ES-2.5 MIC4424CWM TR LP2960IM-5.0 LM2673T-3.3/NOPB SCAN92LV090VEHX/NOPB LM2657MTC/NOPB LP3984IMF-1.8 LMH2180YD/NOPB LM4930ITL/NOPB LM3502SQ-16/NOPB LM3503ITL-35/NOPB

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