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STB155N3LH6 Datasheet, PDF

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STB155N3LH6 Part Attribute

  • Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
  • Part No. STB155N3LH6
  • Manufacturer 意法-ST

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