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STD105N10F7AG Datasheet, PDF

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STD105N10F7AG Part Attribute

  • Description 该N-沟道功率MOSFET利用STripFET™F7技术和增强型沟槽栅极结构,可降低通态电阻,同时降低内部电容和栅极电荷,从而使开关速度更快、能效更高。
  • Part No. STD105N10F7AG
  • Manufacturer 意法-ST

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